Product Summary

The HY531000ALJ-60 is a radiation hardened power MOSFET. It provides high performance power MOSFETs for space applications.These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80.

Parametrics

HY531000ALJ-60 absolute maximum ratings: (1)continuous drain current: 18A; (2)continuous drain current: 14A; (3)pulsed drain current: 72A; (4)max.power dissipation: 75W; (5)avalanche current: 18A; (6)operating junction storage temperature range: -55 to 150℃; (7)lead temperature: 300℃.

Features

HY531000ALJ-60 features: (1)Single Event Effect (SEE) Hardened; (2)Ultra Low RDS(on); (3)Low Total Gate Charge; (4)Simple Drive Requirements; (5)Ease of Paralleling; (6)Hermetically Sealed; (7)Ceramic Eyelets; (8)Light Weight.

Diagrams

HY531000ALJ-60 test circuit