Product Summary

The FQD2N90 is an N-Channel enhancement mode power field effect transistor produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been expecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency switch mode power supply.

Parametrics

FQD2N90 absolute maximum ratings: (1)VDSS, drain-source voltage: 900v; (2)ID, drain current: 1.7A at continuous(Tc=25℃ 1.08A at at continuous(Tc=100℃; (3)IDM, drain current: 6.8 A at plused; (4)VGSS, gate-source voltage: 30v; (5)EAS, single pulsed avalanche energy: 170mJ; (6)IAR, avalanche current: 1.7A; (7)EAR, repectitive avalanche energy: 5.0mJ; (8)dv/dt, peak diode recovery dv/dt: 4.0v/ns; (9)PD, power dissipation: 2.5w at TA=25℃ 50w at TC=25℃; (10)power dissipation derate above 25℃ 0.4 w/℃; (11)TJ, TSTG, operating and storage temperature raange: -55 to 150℃; (12)TL, maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds: 300℃.

Features

FQD2N90 features: (1)1.7A, 900V, RDS(on) = 7.2Ω at VGS = 10 V; (2)Low gate charge ( typical 12 nC); (3)Low Crss ( typical 5.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQD2N90 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQD2N90TF
FQD2N90TF
Fairchild Semiconductor
MOSFET 900V N-Channel QFET
Data Sheet
Negotiable 
FQD2N90TM
FQD2N90TM
Fairchild Semiconductor
MOSFET 900V N-Channel QFET
Data Sheet
Negotiable