(Hong Kong)
Product Summary
The IRL620S is a Power MOSFET. It provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRL620S absolute maximum ratings: (1)Continuous Drain Current, VGS @ 5.0 V:5.2A; (2)Continuous Drain Current, VGS @ 5.0 V:3.3A; (3)Pulsed Drain Current:21A; (4)Power Dissipation:50W; (5)Power Dissipation (PCB Mount):3.1W; (6)Linear Derating Factor:0.40W/℃; (7)Linear Derating Factor (PCB Mount):0.025W/℃; (8)Gate-to-Source Voltage:±10V; (9)Single Pulse Avalanche Energy:125mJ; (10)Avalanche Current:5.2A; (11)Repetitive Avalanche Energy:5.0mJ; (12)Peak Diode Recovery dv/dt:5.0V/ns; (13)Junction and Storage Temperature Range:-55 to + 150℃.
Features
IRL620S features: (1)Surface Mount; (2)Available in Tape & Reel; (3)Dynamic dv/dt Rating; (4)Repetitive Avalanche Rated; (5)Logic-Level Gate Drive; (6)RDS(on) Specified at VGS=4V & 5V; (7)Fast Switching.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRL620S |
Vishay/Siliconix |
MOSFET N-Chan 200V 5.2 Amp |
Data Sheet |
Negotiable |
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 |
IRL620S, SiHL620S |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRL620SPBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 5.2 Amp |
Data Sheet |
|
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IRL620STRLPBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 5.2 Amp |
Data Sheet |
Negotiable |
|
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 |
IRL620STRR |
|
MOSFET N-CH 200V 5.2A D2PAK |
Data Sheet |
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IRL620STRL |
|
MOSFET N-CH 200V 5.2A D2PAK |
Data Sheet |
Negotiable |
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