Product Summary

The STP3NK100Z is a Power MOSFET. It is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout.

Parametrics

STP3NK100Z absolute maximum ratings: (1)Drain-source voltage (VGS = 0):1000V; (2)Gate-source voltage:± 30V; (3)Drain current (continuous) at TC = 25℃:2.5A; (4)Drain current (continuous) at TC = 100℃:1.57A; (5)Drain current (pulsed):10A; (6)Total dissipation at TC = 25℃:90W; (7)Derating factor:0.72W/℃; (8)Gate source ESD (HBM-C=100pF, R=1.5KΩ):3000V; (9)Peak diode recovery voltage slope:4.5V/ns; (10)Operating junction temperature:-55℃ to 150℃; (11)Storage temperature:-55℃ to 150℃.

Features

STP3NK100Z features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.

Diagrams

STP3NK100Z block diagram

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