(Hong Kong)
Product Summary
The M29F800AB-70N6 is an 8 Mbit non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
Parametrics
M29F800AB-70N6 absolute maximum ratings: (1)TBIAS, Temperature Under Bias: -50 to 125 ℃ (2)TSTG, Storage Temperature: -55 to 150 ℃ (3)VIO, Input or Output Voltage: -5.6 to 6 V; (4)VCC, Supply Voltage: -5.6 to 6 V; (5)VID, Identification Voltage: -5.6 to 13.5 V.
Features
M29F800AB-70N6 features: (1)SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS; (2)ACCESS TIME: 70ns; (3)PROGRAMMING TIME: 8ms per Byte/Word typical; (4)19 MEMORY BLOCKS: 1 Boot Block (Top or Bottom Location); 2 Parameter and 16 Main Blocks; (5)PROGRAM/ERASE CONTROLLER: Embedded Byte/Word Program algorithm; Embedded Multi-Block/Chip Erase algorithm; Status Register Polling and Toggle Bits; Ready/Busy Output Pin; (6)ERASE SUSPEND and RESUME MODES: Read and Program another Block during Erase Suspend; (7)TEMPORARY BLOCK UNPROTECTION MODE; (8)LOW POWER CONSUMPTION: Standby and Automatic Standby; (9)100,000 PROGRAM/ERASE CYCLES per BLOCK; (10)20 YEARS DATA RETENTION: Defectivity below 1 ppm/year; (11)ELECTRONIC SIGNATURE: Manufacturer Code: 0020h; M29F800AT Device Code: 00ECh; M29F800AB Device Code: 0058h.
Diagrams
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STMicroelectronics |
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Data Sheet |
Negotiable |
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